型号 功能描述 生产厂家 企业 LOGO 操作
IS61C67

16K X 1 HIGH SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

ISSI

矽成半导体

IS61C67

16K X 1 HIGH SPEED CMOS STATIC RAM

ISSI

矽成半导体

16K X 1 HIGH SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

ISSI

矽成半导体

16K X 1 HIGH SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

ISSI

矽成半导体

16K X 1 HIGH SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

ISSI

矽成半导体

16K X 1 HIGH SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

ISSI

矽成半导体

16K X 1 HIGH SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

ISSI

矽成半导体

16K X 1 HIGH SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

ISSI

矽成半导体

IS61C67产品属性

  • 类型

    描述

  • 型号

    IS61C67

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    16K X 1 HIGH SPEED CMOS STATIC RAM

更新时间:2025-12-28 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI
25+
TO-220
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
ISSI
23+
DIP14
5000
原装正品,假一罚十
ISSI(美国芯成)
2447
LFBGA-165(13x15)
315000
144个/托盘一级代理专营品牌!原装正品,优势现货,长
ISSI
23+
198
60972
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
11+
62000
原装正品现货优势18
ISSI, Integrated Silicon Solut
21+
165-TBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
23+
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
23+
165-FBGA(15x17)
39257
专业分销产品!原装正品!价格优势!
ISSI
25+
电联咨询
7800
公司现货,提供拆样技术支持

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