IS61C512价格

参考价格:¥21.7902

型号:IS61C5128AL-10KLI 品牌:ISSI 备注:这里有IS61C512多少钱,2025年最近7天走势,今日出价,今日竞价,IS61C512批发/采购报价,IS61C512行情走势销售排行榜,IS61C512报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61C512

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

IS61C512

ASYNCHRONOUS STATIC RAM, High Speed A.SRAM

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C5128AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) • High-speed access time: 25ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typi

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C5128AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) • High-speed access time: 25ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typi

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C5128AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) • High-speed access time: 25ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typi

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C5128AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) • High-speed access time: 25ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typi

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C5128AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) • High-speed access time: 25ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typi

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C5128AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) • High-speed access time: 25ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typi

ISSI

矽成半导体

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

64K x 8 HIGH-SPEED CMOS STATIC RAM

文件:425.04 Kbytes Page:8 Pages

ICSI

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

5V High-Speed Asynchronous SRAM

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

封装/外壳:36-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 36SOJ 集成电路(IC) 存储器

ETC

知名厂家

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

5V High-Speed Asynchronous SRAM

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

512K x 8 HIGH-SPEED CMOS STATIC RAM

文件:382.95 Kbytes Page:19 Pages

ISSI

矽成半导体

IS61C512产品属性

  • 类型

    描述

  • 型号

    IS61C512

  • 功能描述

    x8 SRAM

更新时间:2025-12-17 8:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
DIP
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
INTEGRATEDSILICONSOLUTION
2022+
5000
只做原装,价格优惠,长期供货。
ISSI
2023+
SMD
40
安罗世纪电子只做原装正品货
ISSI
24+
SOJ32
6980
原装现货,可开13%税票
ISSI
21+
SOP
10000
原装现货假一罚十
ISSI(美国芯成)
2021+
SOP-32
531
ISSI
22+
DIP-32
8000
原装正品支持实单
ISSI
2016+
SOJ28
1000
只做原装,假一罚十,公司可开17%增值税发票!
1015+
DIP
5300
进口原装特价热卖中,可开17票!
ISSI
24+
TSOP
48000
特价特价100原装长期供货.

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