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32K x 8 HIGH-SPEED CMOS STATIC RAM

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ISSI

矽成半导体

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

32K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES

ICSI

更新时间:2026-2-12 22:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
SMD-28
80000
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ISSI
24+
SOP28
20000
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2450+
SOJ28
9850
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INTEGRATEDS
23+
原厂封装
9888
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ISSI
26+
SOP-28
890000
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ISSI
22+
SOJ28
5000
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ISSI
23+
TSOP
5000
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ISSI
2025+
SOJ-28
5000
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ISSI
2023+
TSOP
50000
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ISSI
23+
SMD-28
7000

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