288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory

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RLDRAM® 2 Memory

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

32 M b x9, 16 Mb x18, 8 Mbx36 Common I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed a

封装/外壳：144-TFBGA 包装：托盘 描述：IC DRAM 288MBIT PAR 144FCBGA 集成电路（IC） 存储器

封装/外壳：144-TFBGA 包装：托盘 描述：IC DRAM 288MBIT PAR 144FCBGA 集成电路（IC） 存储器