位置：首页 > IC中文资料 > IS46LR16640C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS46LR16640C | 1Gb (x16, x32) Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK | ISSI 矽成半导体 |   | |
1Gb (x16, x32) Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK | ISSI 矽成半导体 | | ||
1Gb (x16, x32) Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK | ISSI 矽成半导体 | | ||
1Gb (x16, x32) Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK | ISSI 矽成半导体 | | ||
1Gb (x16, x32) Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK | ISSI 矽成半导体 | | ||
Four internal banks for concurrent operation 文件：1.85788 Mbytes Page：43 Pages | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
25+ |
BGA60 |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI, Integrated Silicon Solut |
24+ |
90-TFBGA(8x13) |
56200 |
一级代理/放心采购 |
|||
ISSI |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ISSI |
25+ |
BGA |
10000 |
全新原装现货库存 |
|||
ISSI, Integrated Silicon Solut |
21+ |
165-TBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI Integrated Silicon Soluti |
22+ |
90TFBGA (8x13) |
9000 |
原厂渠道,现货配单 |
|||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
三年内 |
1983 |
只做原装正品 |
||||
issi |
1227+ |
BGA |
900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IS46LR16640C规格书下载地址
IS46LR16640C参数引脚图相关
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- IS46LR32160D
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- IS46LR16640A
- IS46LR16400C-6BLA2
- IS46LR16400C-6BLA1
- IS46LR16400C
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IS46LR16640C数据表相关新闻
IS45S16320F-7BLA2
IS45S16320F-7BLA2
2023-4-4IS46LR32160B-6BLA1
IS46LR32160B-6BLA1
2021-6-2IS45VM16320D-75BLA1
IS45VM16320D-75BLA1
2021-6-2IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS46TR16128CL-125KBLA1
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS45VM16320D-75BLA2
LPSDRAM AUTO-MOBILE / 32MX16 MSDRAM / BGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY
2019-12-16
DdatasheetPDF页码索引
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