512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

封装/外壳：96-TFBGA 包装：管件 描述：IC DRAM 4GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 4GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture