型号 功能描述 生产厂家 企业 LOGO 操作

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

封装/外壳:96-TFBGA 包装:管件 描述:IC DRAM 2GBIT PARALLEL 96TWBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:96-TFBGA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC DRAM 2GBIT PARALLEL 96TWBGA 集成电路(IC) 存储器

ETC

知名厂家

更新时间:2025-12-18 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
BGA
5000
全新原装正品,现货销售
ISSI
25+
BGA96
15000
全新原装现货,假一赔十。
ISSI
24+
BGA
5000
十年沉淀唯有原装
ISSI
2023+
TFBGA96
6893
十五年行业诚信经营,专注全新正品
ISSI
25+
10
公司优势库存 热卖中!
ISSI
23+
BGA96
8560
受权代理!全新原装现货特价热卖!
ISSI
22+
BGA
12245
现货,原厂原装假一罚十!
ISSI
24+
BGA96
15000
原装原标原盒 给价就出 全网最低
ISSI
24+
TFBGA96
10000
全新原装深圳仓库现货有单必成
ISSI
24+
QFN6
9600
原装现货,优势供应,支持实单!

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