Programmable CAS Latency

文件：3.85869 Mbytes Page：88 Pages

1.5V DDR3 SDRAM

封装/外壳：96-TFBGA 包装：散装 描述：IC DRAM 2GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

封装/外壳：96-TFBGA 包装：卷带（TR） 描述：IC DRAM 2GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

1.35V DDR3L SDRAM

Programmable CAS Latency

文件：3.85869 Mbytes Page：88 Pages

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

Programmable CAS Latency

文件：3.82435 Mbytes Page：88 Pages