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位置：首页 > IC中文资料 > IS43R86400D

IS43R86400D价格

参考价格：￥44.0956

型号：IS43R86400D-5BL 品牌：ISSI 备注：这里有IS43R86400D多少钱，2025年最近7天走势，今日出价，今日竞价，IS43R86400D批发/采购报价，IS43R86400D行情走势销售排行榜，IS43R86400D报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS43R86400D

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D

DDR SDRAM

ISSI

矽成半导体

IS43R86400D-5B

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5BL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5BL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5BLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5BLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5TL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5TL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5TLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5TLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6BI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6BI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6BL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6BL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6BLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6BLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6TL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6TL

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6TLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-6TLI

16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V (-6) • VDD and VDDQ: 2.6V ± 0.1V (-5) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS

ISSI

矽成半导体

IS43R86400D-5BLI

封装/外壳：60-TFBGA 包装：托盘 描述：IC DRAM 512MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器

ETC

知名厂家

IS43R86400D-5BLI-TR

封装/外壳：60-TFBGA 包装：卷带（TR） 描述：IC DRAM 512MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器

ETC

知名厂家

IS43R86400D供应商更多...

更新时间：2025-12-18 12:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市亿智腾科技有限公司
IS43R86400D-6BLI
ISSI
24+
NA
57254
特价原装假一送奔驰
询价
深圳市亿联芯电子科技有限公司
IS43R86400D-6BL
ISSI
2023+
60TFBGA
2090
原厂全新正品旗舰店优势现货
询价
深圳市华来深电子有限公司
IS43R86400D-5BLI
ISSI
23+
BGA
8650
受权代理!全新原装现货特价热卖!
询价
深圳市昊创电子有限公司
IS43R86400D-5B
ISSI/矽成
1113
DDR1SDRAM/64MX8DDR1/BGA6
126
原装香港现货真实库存。低价
询价
深圳市宇创芯科技有限公司
IS43R86400D-6TLI
ISSI
24+
TSOP66
9600
原装现货,优势供应,支持实单!
询价
深圳市坤融电子科技有限公司
IS43R86400D-6TLI-TR
ISSI/芯成
2025+
TSOP-66
5000
原装进口价格优 请找坤融电子!
询价
贸泽芯城（深圳）电子科技有限公司
IS43R86400D-5TLI
ISSI
23+
TSOP66
4776
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市纳立科技有限公司
IS43R86400D-6TL
ISSI
三年内
1983
只做原装正品
询价
深圳市威雅利发展有限公司
IS43R86400D-6BL
ISSI
1809+
60TFBGA
2090
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市安富世纪电子有限公司
IS43R86400D-6TL-TR
ISSI, Integrated Silicon Solu
23+
66-TSOP II
7300
专注配单,只做原装进口现货
询价

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