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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS43LR16400C-6BLI | 1M x 16Bits x 4Banks Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, | ISSI 矽成半导体 |   | |
IS43LR16400C-6BLI | 封装/外壳：60-TFBGA 包装：托盘 描述：IC DRAM 64MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
封装/外壳：60-TFBGA 包装：管件 描述：IC DRAM 64MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
动态随机存取存储器 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS | ISSI 矽成半导体 | | ||
1M x 16Bits x 4Banks Mobile DDR SDRAM Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
14+ |
BGA |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI(美国芯成) |
2021+ |
TFBGA-60(8x10) |
499 |
||||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
23+ |
BGA60 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI(美国芯成) |
24+ |
TFBGA60(8x10) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI, Integrated Silicon Solu |
23+ |
60-TFBGA8x10 |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI(美国芯成) |
2447 |
TFBGA-60(8x10) |
315000 |
300个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
ISSI |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
IS43LR16400C-6BLI芯片相关品牌
IS43LR16400C-6BLI规格书下载地址
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IS43LR16400C-6BLI数据表相关新闻
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2019-5-9
DdatasheetPDF页码索引
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