64Mx8, 32Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 4 inte

封装/外壳：84-TFBGA 包装：托盘 描述：IC DRAM 512MBIT PARALLEL 84TWBGA 集成电路（IC） 存储器

动态随机存储器(DRAM)

封装/外壳：84-TFBGA 包装：卷带（TR） 描述：IC DRAM 512MBIT PARALLEL 84TWBGA 集成电路（IC） 存储器

64Mx8, 32Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 4 inte

64Mx8, 32Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 4 inte