型号 功能描述 生产厂家 企业 LOGO 操作
IS43DR16128C

256Mx8, 128Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 8 inte

ISSI

矽成半导体

IS43DR16128C

1.8V DDR2 SDRAM

ISSI

矽成半导体

2Gb (x16) DDR2 SDRAM

文件:580.58 Kbytes Page:26 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 8 inte

ISSI

矽成半导体

256Mx8, 128Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 8 inte

ISSI

矽成半导体

256Mx8, 128Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 8 inte

ISSI

矽成半导体

256Mx8, 128Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 8 inte

ISSI

矽成半导体

256Mx8, 128Mx16 DDR2 DRAM

FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 8 inte

ISSI

矽成半导体

封装/外壳:84-TFBGA 包装:管件 描述:IC DRAM 2GBIT PARALLEL 84TWBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:84-TFBGA 包装:卷带(TR) 描述:IC DRAM 2GBIT PARALLEL 84TWBGA 集成电路(IC) 存储器

ETC

知名厂家

Clock frequency up to 333MHz

文件:993.62 Kbytes Page:26 Pages

ISSI

矽成半导体

更新时间:2026-3-3 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
BGA84
15000
原装原标原盒 给价就出 全网最低
ISSI
18+
BGA84
85600
保证进口原装可开17%增值税发票
ISSI
26+
BGA84
86720
全新原装正品价格最实惠 假一赔百
ISSI(美国芯成)
2021+
TWBGA-84(8x12.5)
499
ISSI
25+
BGA84
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI
23+
BGA84
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI(美国芯成)
2447
TWBGA-84(8x12.5)
315000
209个/托盘一级代理专营品牌!原装正品,优势现货,长
ISSI
2023+
BGA84
6895
原厂全新正品旗舰店优势现货
ISSI, Integrated Silicon Solu
23+
84-TWBGA8x12.5
7300
专注配单,只做原装进口现货
ISSI, Integrated Silicon Solut
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!

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