128Mb SYNCHRONOUS DRAM

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SDR SDRAM

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：管件 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件：540.49 Kbytes Page：61 Pages

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件：556.97 Kbytes Page：66 Pages

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7