型号 功能描述 生产厂家 企业 LOGO 操作
IS42S32400E-6BLI-TR

封装/外壳:90-TFBGA 包装:卷带(TR) 描述:IC DRAM 128MBIT PARALLEL 90TFBGA 集成电路(IC) 存储器

ETC

知名厂家

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

ISSI

矽成半导体

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

ISSI

矽成半导体

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

ISSI

矽成半导体

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

ISSI

矽成半导体

4M x 32 128Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync

ISSI

矽成半导体

IS42S32400E-6BLI-TR产品属性

  • 类型

    描述

  • 型号

    IS42S32400E-6BLI-TR

  • 功能描述

    动态随机存取存储器 128M(4Mx32) 166MHz S动态随机存取存储器, 3.3v

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2026-2-4 12:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2023+
TSSOP86
5800
进口原装,现货热卖
ISSI
23+
TSOP
8560
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ISSI
2025+
TSOP
3615
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ISSI
24+
TSOP
5825
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ISSI
2023+
TSOP86
8635
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ISSI
25+
18
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ISSI
23+
10000
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ISSI
23+
TSOP86
6500
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ISSI
三年内
1983
只做原装正品
ISSI
23+
TSOP86
61011
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