512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

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512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DESCR

封装/外壳：86-TFSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 64MBIT PAR 86TSOP II 集成电路（IC） 存储器

封装/外壳：90-TFBGA 包装：卷带（TR） 描述：IC DRAM 64MBIT PARALLEL 90TFBGA 集成电路（IC） 存储器

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DESCR

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea