位置：首页 > IC中文资料第11514页 > IS42S32200E-7BI-TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES | ISSI 矽成半导体 |   | ||
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES | ISSI 矽成半导体 | | ||
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES | ISSI 矽成半导体 | | ||
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES | ISSI 矽成半导体 | | ||
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES | ISSI 矽成半导体 | |
IS42S32200E-7BI-TR产品属性
- 类型
描述
- 型号
IS42S32200E-7BI-TR
- 功能描述
动态随机存取存储器 64M(2Mx32) 143Mhz Industrial Temp
- RoHS
否
- 制造商
ISSI
- 数据总线宽度
16 bit
- 组织
1 M x 16
- 封装/箱体
SOJ-42
- 存储容量
16 MB
- 访问时间
50 ns
- 电源电压-最大
7 V
- 电源电压-最小
- 1 V
- 最大工作电流
90 mA
- 最大工作温度
+ 85 C
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
26+ |
86-TSOPII |
9231 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ISSI |
24+ |
TSOP86 |
10000 |
||||
ISSI |
2450+ |
TSOP86 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ISSI |
24+ |
TSOP-86 |
6800 |
100%原装进口现货,欢迎来电咨询 |
|||
ISSI |
2016+ |
TSOP |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INTEGRATEDS |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
ISSI |
25+ |
SOP |
30000 |
代理全新原装现货,价格优势 |
|||
ISSI |
TSOP |
125000 |
一级代理原装正品,价格优势,长期供应! |
||||
ISSI |
25+23+ |
TSOPII86 |
48183 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ISSI(美国芯成) |
25+ |
86-TSOP II |
500000 |
源自原厂成本,高价回收工厂呆滞 |
IS42S32200E-7BI-TR芯片相关品牌
IS42S32200E-7BI-TR规格书下载地址
IS42S32200E-7BI-TR参数引脚图相关
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- IS42S32200E-7TL-TR
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- IS42S32200E-7TL
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- IS423
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IS42S32200E-7BI-TR数据表相关新闻
IS42S32800J-7TL
IS42S32800J-7TL
2022-12-1IS42S16800F
IS42S16800F,全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
2021-7-19IS42S32800J-6TLI
IS42S32800J-6TLI TJA1051T/1 ISL9237HRZ-T XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG
2021-6-25IS42S32800D-6BLI进口原装，主营军工级IC
IS42S32800D-6BLI 进口原装，主营军工级IC
2020-12-8IS42S16800F-7TLI坚持每一片芯片都来自原厂及授权渠道,自营库存.大陆现货，货品纯正，质优价宜
IS42S16800F-7TLI坚持每一片芯片都来自原厂及授权渠道,自营库存.大陆现货，货品纯正，质优价宜
2020-7-1IS42S16800F-6TL
IS42S16800F-6TL
2019-3-5
DdatasheetPDF页码索引
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