IS42S32200E-6TLI价格

参考价格:¥21.3929

型号:IS42S32200E-6TLI 品牌:ISSI 备注:这里有IS42S32200E-6TLI多少钱,2026年最近7天走势,今日出价,今日竞价,IS42S32200E-6TLI批发/采购报价,IS42S32200E-6TLI行情走势销售排行榜,IS42S32200E-6TLI报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS42S32200E-6TLI

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

IS42S32200E-6TLI

封装/外壳:86-TFSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC DRAM 64MBIT PAR 86TSOP II 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:86-TFSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC DRAM 64MBIT PAR 86TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

IS42S32200E-6TLI产品属性

  • 类型

    描述

  • 型号

    IS42S32200E-6TLI

  • 功能描述

    动态随机存取存储器 64M(2Mx32) 166MHz S动态随机存取存储器, 3.3v

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2026-2-2 21:44:00
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25+
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