IS42S32200E-6TLI价格

参考价格:¥21.3929

型号:IS42S32200E-6TLI 品牌:ISSI 备注:这里有IS42S32200E-6TLI多少钱,2025年最近7天走势,今日出价,今日竞价,IS42S32200E-6TLI批发/采购报价,IS42S32200E-6TLI行情走势销售排行榜,IS42S32200E-6TLI报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS42S32200E-6TLI

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

IS42S32200E-6TLI

封装/外壳:86-TFSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC DRAM 64MBIT PAR 86TSOP II 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:86-TFSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC DRAM 64MBIT PAR 86TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES

ISSI

矽成半导体

IS42S32200E-6TLI产品属性

  • 类型

    描述

  • 型号

    IS42S32200E-6TLI

  • 功能描述

    动态随机存取存储器 64M(2Mx32) 166MHz S动态随机存取存储器, 3.3v

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-9-29 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
25+
TSSOP
880000
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ISSI
2018+
26976
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ISSI
23+
86-TSOPII
1389
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0933+
TSOP
15389
只做原厂原装,认准宝芯创配单专家
ISSI
25+
TSOP-86
16000
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ISSI
2450+
TSSOP
8850
只做原装正品假一赔十为客户做到零风险!!
ISSI
17+
TSOP86
6200
100%原装正品现货
ISSI
存储器
TSOP
41951
ISSI存储芯片IS42S32200E-6TLI即刻询购立享优惠#长期有货
ISSI
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TSSOP
3587
全新原厂原装产品、公司现货销售
ISSI
原厂封装
9800
原装进口公司现货假一赔百

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