IS42S16400价格

参考价格:¥19.1372

型号:IS42S16400F-6BL 品牌:ISSI 备注:这里有IS42S16400多少钱,2025年最近7天走势,今日出价,今日竞价,IS42S16400批发/采购报价,IS42S16400行情走势销售排行榜,IS42S16400报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IS42S16400

2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram

2(1)M Words x 8(16) Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

ICSI

IS42S16400

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

ISSI

北京矽成

IS42S16400

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:675.74 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400A is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • C

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400B1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400B1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES •

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns b

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

ISSI

北京矽成

2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram

2(1)M Words x 8(16) Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

ICSI

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:675.74 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:472.1 Kbytes Page:55 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:472.1 Kbytes Page:55 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:472.1 Kbytes Page:55 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:472.1 Kbytes Page:55 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:472.1 Kbytes Page:55 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:566.59 Kbytes Page:55 Pages

ISSI

北京矽成

封装/外壳:60-TFBGA 包装:托盘 描述:IC DRAM 64MBIT PAR 60MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:60-TFBGA 包装:卷带(TR) 描述:IC DRAM 64MBIT PAR 60MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:1.05389 Mbytes Page:58 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:1.05389 Mbytes Page:58 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:1.05389 Mbytes Page:58 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:822.43 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:822.43 Kbytes Page:55 Pages

ISSI

北京矽成

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:1.05389 Mbytes Page:58 Pages

ISSI

北京矽成

IS42S16400产品属性

  • 类型

    描述

  • 型号

    IS42S16400

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1 Meg Bits x 16 Bits x 4 Banks(64-MBIT) SYNCHRONOUS DYNAMIC RAM

更新时间:2025-8-11 23:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
原装
25+
标准
32134
热卖原装进口
ISSI
100000
代理渠道/只做原装/可含税
ISSI
2023+
TSSOP-54
53500
正品,原装现货
ISSI
21+
TSOP54
9800
只做原装正品假一赔十!正规渠道订货!
ISSI
21+
TSOP54
1400
十年信誉,只做原装,有挂就有现货!
ISSI
22+
TSOP54
60000
原装优质现货订货渠道商
ISSI
23+
TSOP
47
只做原装全系列供应价格优势
ISSI
23+
TSOP
15000
全新原装现货,假一赔十.
ISSI
21+
FBGA
466
十年专营,原装现货,假一赔十
ISSI
24+
BGA532
23000
免费送样原盒原包现货一手渠道联系

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