型号 功能描述 生产厂家 企业 LOGO 操作

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

矽成半导体

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

矽成半导体

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

矽成半导体

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

矽成半导体

更新时间:2025-12-10 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
7530
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ISSI
2016+
FBGA
6000
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ISSI
1012+
FBGA54
279
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ISSI
24+
BGA(54)
12000
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ISSI
2450+
BGA
6540
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ISSI
25+
WBGA-54
25000
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ISSI
23+
54-WBGA(11x13)
24840
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ISSI/矽成
1026
SDRAM/32MX16SD/FBGA-54/1
10
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ISSI
23+
BGA
8560
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ISSI
23+
BGA
12800
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