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型号	功能描述	生产厂家企业	LOGO
IS29GL128	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128	Parallel (ISA) NOR Flash	ISSI 矽成半导体	ISSI
IS29GL128-70DLA3B	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLA3H	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLA3L	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLA3T	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLEB	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLEH	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLEL	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLET	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLA3B	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLA3H	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLA3L	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLA3T	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLEB	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLEH	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLEL	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70FLET	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLA3B	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLA3H	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLA3L	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLA3L	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLA3T	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLA3T	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLEB	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLEB	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLEH	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLEL	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70GLET	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLA3B	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLA3H	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLA3L	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLA3T	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLEB	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLEH	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLEL	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70SLET	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLA3B	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLA3H	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLA3L	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLA3T	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLEB	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLEH	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLEL	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70WLET	3.0V PAGE MODE PARALLEL FLASH MEMORY FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o	ISSI 矽成半导体	ISSI
IS29GL128-70DLET	封装/外壳：64-LBGA 包装：托盘描述：IC FLASH 128MBIT PAR 64LFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS29GL128-70FLEB	封装/外壳：64-LBGA 包装：管件描述：IC FLASH 128MBIT PAR 64LFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS29GL128S-90DHI02-TR	NOR闪存 Nor	Infineon 英飞凌	Infineon
EN29GL128H	128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only 文件：746.5 Kbytes Page：54 Pages	EON 宜扬科技	EON
EN29GL128H	128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only 文件：747.88 Kbytes Page：54 Pages	EON 宜扬科技	EON
EN29GL128HL	128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only 文件：783.03 Kbytes Page：54 Pages	EON 宜扬科技	EON
EN29GL128L	128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only 文件：746.5 Kbytes Page：54 Pages	EON 宜扬科技	EON

IS29GL128供应商更多...

更新时间：2025-11-18 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS29GL128-70SLET	ISSI(美国芯成)	24+	TSOPI5618.4mm	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市和悦电子贸易有限公司	IS29GL128-70SLEB-TR	ISSI		TSOP56	50000		询价
深圳市华睿芯科技有限公司	IS29GL128-70SLET	ISSI	24+	TSOP-56	16500	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市力拓辉电子有限公司	IS29GL128-70SLEB	ISSI	21+	TSOP	6535	全新原装鄙视假货	询价
深圳市星辰微电科技有限公司	IS29GL128	ISSI	23+	BGA	4500	ISSI存储芯片在售	询价
深圳市明嘉莱科技有限公司	IS29GL128-70DLET	WINBOND/华邦	20+	SMD	880000	明嘉莱只做原装正品现货	询价
深圳市湘达电子科技有限公司	IS29GL128-70SLA3T	ISSI	2022+		6600	只做原装,假一罚十,长期供货。	询价
深圳市云美电子科技有限公司	IS29GL128-70DLET	ISSI	24+	原封装	52000	只做原装进口现货	询价
深圳市冠亿通科技有限公司	IS29GL128S-10DHB01-TR	Cypress	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市东来宝电子科技有限公司	IS29GL128-70DLET	ISSI	24+	原封装	29823	郑重承诺只做原装进口现货	询价

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2020-1-9
IS25LP032D-JBLE-TR
IS25LP032D-JBLE-TR
2019-11-14
IS25LP032D-JKLE
IS25LP032D-JKLE
2019-11-14

DdatasheetPDF页码索引

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DdatasheetPDF页码索引