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3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

IS29产品属性

  • 类型

    描述

  • 型号

    IS29

  • 制造商

    IDEC Corporation

  • 功能描述

    SENS.IND. 10-30VDC PNP NO

更新时间:2026-3-17 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
BGA-64
16500
全新原厂原装,进口正品现货,正规渠道可含税!!
ISSI
21+
BGA
6535
全新原装鄙视假货
ISSI, Integrated Silicon Solut
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ISSI
25+
TSOP56
5000
原厂原装,价格优势
ISSI(美国芯成)
2021+
TSOPI-56
499
ISSI
23+
BGA64
25000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI(美国芯成)
2447
LFBGA-64(9x9)
315000
260个/托盘一级代理专营品牌!原装正品,优势现货,长
ISSI(美国芯成)
23+
TSOP56
8000
只做原装现货
ISSI
36
ISSI
24+
con
36
现货常备产品原装可到京北通宇商城查价格

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