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型号 功能描述 生产厂家 企业 LOGO 操作
IS28F020BV

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

ISSI

矽成半导体

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

INTEL

英特尔

2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F020 is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

AMD

超威半导体

2 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F020 is a high speed 256K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast Re

CATALYST

2M (256K 횞 8) Flash Memory

INTRODUCTION Sharp’s LH28F020SU-N 2M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5.0 V single voltage operations and very high read/write performance, the LH28

SHARPSharp Corporation

夏普

262144 BY 8-BIT FLASH MEMORY

文件:312.48 Kbytes Page:21 Pages

TI

德州仪器

IS28F020BV产品属性

  • 类型

    描述

  • 型号

    IS28F020BV

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

更新时间:2026-5-20 11:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP/微芯
22+
QFN48
12245
现货,原厂原装假一罚十!
MICROCHIP
2511
QFN-48
4945
电子元器件采购降本30%!原厂直采,砍掉中间差价
MICROCHIP/微芯
23+
QFN48
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ISSC
25+23+
QFN48
29251
绝对原装正品全新进口深圳现货
MICROCHIP
23+
QFN-48
2100
正规渠道,只有原装!
MICROCHIP/微芯
25+
QFN48
880000
明嘉莱只做原装正品现货
ISSC
2447
QFN48
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MICROCHIP/微芯
23+
QFN48
50000
全新原装正品现货,支持订货
ISSC
26+
QFN
86720
全新原装正品价格最实惠 假一赔百
ISSC
25+
QFN48
453
全新原装正品支持含税

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