型号 功能描述 生产厂家 企业 LOGO 操作

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

DESCRIPTION IS23SC4418 IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible. The memory can also be erased and written byte by byte. Erasing old data in the byte location must be performed be

ISSI

矽成半导体

IS23SC4428产品属性

  • 类型

    描述

  • 型号

    IS23SC4428

  • 功能描述

    EEPROM

更新时间:2026-1-27 15:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
25+
DIP
2658
原装正品!现货供应!
ISSI
25+
QFN
18000
原厂直接发货进口原装
XP Power
25+
N/A
12000
一级代理保证进口原装正品假一罚十价格合理
ISSI
25+23+
DIP8
12337
绝对原装正品全新进口深圳现货
ISSI
26+
DIP8
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
SHARP/夏普
2026+
SIP-7
65428
百分百原装现货 实单必成
ISSI
2402+
DIP-8
8324
原装正品!实单价优!
SHARP
23+
57973
##公司主营品牌长期供应100%原装现货可含税提供技术
SHARP/夏普
24+
SIP-7
880000
明嘉莱只做原装正品现货
ISSI
DIP8
9500
一级代理 原装正品假一罚十价格优势长期供货

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