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IRLZ44N价格
参考价格：￥2.1537
型号：IRLZ44NPBF 品牌：International 备注：这里有IRLZ44N多少钱，2025年最近7天走势，今日出价，今日竞价，IRLZ44N批发/采购报价，IRLZ44N行情走势销售排行榜，IRLZ44N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRLZ44N | Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRLZ44N | N-Channel MOSFET Transistor 文件：338.23 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRLZ44N | 采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET | Infineon 英飞凌 | | |
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET HEXFET® Power MOSFET | IRF | | ||
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
N-Channel MOSFET Transistor 文件：338.23 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Advnaced Process Technology 文件：228.92 Kbytes Page：9 Pages | IRF | | ||
Advnaced Process Technology 文件：228.92 Kbytes Page：9 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
采用 D²PAK 封装的 IR MOSFET 55 V | Infineon 英飞凌 | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：345.9 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive | Infineon 英飞凌 | | ||
Advnaced Process Technology 文件：345.9 Kbytes Page：11 Pages | IRF | | ||
Advnaced Process Technology 文件：345.9 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | |
IRLZ44N产品属性
- 类型
描述
- 型号
IRLZ44N
- 功能描述
MOSFET MOSFET, 55V, 41A, 22 mOhm, 32 nC Qg, Logic Level, TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2021 |
TO-220 |
10000 |
全新原装公司现货
|
|||
Infineon |
23+ |
TO220 |
15500 |
英飞凌优势渠道全系列在售 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
IR |
+ROHS全新原装 |
TO-220AB |
242957 |
正纳电子优势原装特价长期供应元器件代理分销 |
|||
50 |
220 |
INFINEON/英飞凌 |
15 |
92 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
6741 |
全新原装现货特价销售,欢迎来电查询 |
|||
IR |
24+ |
TO 220 |
161567 |
明嘉莱只做原装正品现货 |
|||
IR(国际整流器) |
24+ |
N/A |
7148 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
25+23+ |
TO-220 |
25022 |
绝对原装正品全新进口深圳现货 |
|||
IR |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
IRLZ44N规格书下载地址
IRLZ44N参数引脚图相关
- l101
- l100
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- isd1420
- IRM6000
- IRM600
- IRM-60
- IRM-500
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- IRM-15
- IRM-10-24
- IRM-10-15
- IRM-10-12
- IRM-10
- IRM-05-5
- IRM-05-3.3
- IRM-05-24
- IRM-05-15
- IRM-05-12
- IRM-05
- IRM048U
- IRM047U
- IRM046U
- IRM-03
- IRM-02
- IRM-01
- IRLZ4S
- IRLZ44ZSTRLPBF/BKN
- IRLZ44ZSTRLPBF
- IRLZ44ZSPBF
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- IRLZ44ZLPBF
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- IRLZ44STRRPBF
- IRLZ44SPBF
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IRLZ44N数据表相关新闻
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DdatasheetPDF页码索引
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