IRLZ44N价格

参考价格:¥2.1537

型号:IRLZ44NPBF 品牌:International 备注:这里有IRLZ44N多少钱,2026年最近7天走势,今日出价,今日竞价,IRLZ44N批发/采购报价,IRLZ44N行情走势销售排行榜,IRLZ44N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRLZ44N

Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRLZ44N

N-Channel MOSFET Transistor

文件:338.23 Kbytes Page:2 Pages

ISC

无锡固电

IRLZ44N

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Infineon

英飞凌

Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

HEXFET® Power MOSFET

IRF

Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

N-Channel MOSFET Transistor

文件:338.23 Kbytes Page:2 Pages

ISC

无锡固电

Logic-Level Gate Drive

文件:189.26 Kbytes Page:11 Pages

IRF

Advnaced Process Technology

文件:228.92 Kbytes Page:9 Pages

IRF

Advnaced Process Technology

文件:228.92 Kbytes Page:9 Pages

IRF

Logic-Level Gate Drive

文件:189.26 Kbytes Page:11 Pages

IRF

采用 D²PAK 封装的 IR MOSFET 55 V

Infineon

英飞凌

Logic-Level Gate Drive

文件:189.26 Kbytes Page:11 Pages

IRF

Logic-Level Gate Drive

文件:345.9 Kbytes Page:11 Pages

IRF

Logic-Level Gate Drive

Infineon

英飞凌

Advnaced Process Technology

文件:345.9 Kbytes Page:11 Pages

IRF

Advnaced Process Technology

文件:345.9 Kbytes Page:11 Pages

IRF

Logic-Level Gate Drive

文件:189.26 Kbytes Page:11 Pages

IRF

Logic-Level Gate Drive

文件:189.26 Kbytes Page:11 Pages

IRF

Logic-Level Gate Drive

文件:189.26 Kbytes Page:11 Pages

IRF

IRLZ44N产品属性

  • 类型

    描述

  • 型号

    IRLZ44N

  • 功能描述

    MOSFET MOSFET, 55V, 41A, 22 mOhm, 32 nC Qg, Logic Level, TO-220AB

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-5 14:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-220
65400
INFINEON
2021
TO-220
10000
全新原装公司现货
INFINEON/英飞凌
2021+
TO-220
9000
原装现货,随时欢迎询价
Infineon(英飞凌)
25+
TO-220(TO-220-3)
18798
原装正品现货,原厂订货,可支持含税原型号开票。
Infineon(英飞凌)
25+
TO-220(TO-220-3)
18798
原装正品现货,原厂订货,可支持含税原型号开票。
IR
24+
TO 220
161567
明嘉莱只做原装正品现货
IR
+ROHS全新原装
TO-220AB
242957
正纳电子优势原装特价长期供应元器件代理分销
IR
16+
TO-220
36000
原装正品,优势库存81
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
19+
TO-263
21000

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