Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.44Ω ID = 4.7 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)

Advanced Power MOSFET

Advanced Power MOSFETFEATURES\n♦Logic-Level Gate Drive\n♦Avalanche Rugged Technology\n♦Rugged Gate Oxide Technology\n♦Lower Input Capacitance\n♦Improved Gate Charge\n♦Extended Safe Operating Area\n♦Lower Leakage Current: 10µA (Max.) @ VDS= 100V\n♦Lower RDS(ON): 0.336Ω(Typ.) ♦Logic-Level Gate Drive\n♦Avalanche Rugged Technology\n♦Rugged Gate Oxide Technology\n♦Lower Input Capacitance\n♦Improved Gate Charge\n♦Extended Safe Operating Area\n♦Lower Leakage Current: 10µA (Max.) @ VDS= 100V\n♦Lower RDS(ON): 0.336Ω(Typ.);

isc N-Channel MOSFET Transistor

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Avalanche Rugged Technology

BVDSS = 100 V RDS(on) = 0.44Ω ID = 4.7 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)

POWER RECTIFIERS(1.0A,500-1000V)

POWER RECTIFIERS(1.0A,500-1000V)

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS