Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.44Ω ID = 4.7 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)

isc N-Channel MOSFET Transistor

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Avalanche Rugged Technology

BVDSS = 100 V RDS(on) = 0.44Ω ID = 4.7 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

Commercial 3/4inch (19mm) Diameter, 1 1/2 and 2 watt Wirewound Variable Resistor

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Premier Supplier of Electronic Hardware

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PC board mounting and direct insert mounting available

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3 Phase Hi-Torque DC Brushless Motor

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