HEXFET Power MOSFET

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采用 TSOP-6（Micro 6）封装的 -20V 单 P 通道功率 MOSFET

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™

Ultra Low On-Resistance

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™

P-Channel 30-V (D-S) MOSFET

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PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

F (M/F) Right Angle, F(M/F), F (F/F) Bulkhead, F (F) PCB

Features • True 75 Ω BNC adapters. • Gold-plated (15 micro–inches) contacts. • BNC insulation material is PTFE (not delrin).

BROADBAND: RF & WIRELESS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

GIGABIT DUAL TRANSFORMERS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

DC TO 2, 4 GHz, COAXIAL HIGH POWER

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