P-Channel 15-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

丝印代码：1F；P-Channel Enhancement MOSFET

■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching.

丝印代码：1F；P-Channel Enhancement MOSFET

Features Ultra low on-resistance. P-Channel MOSFET. Fast switching.

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

-12V P - Channel MOSFET

场效应管

P-Channel Enhancement-Mode Mosfets

Power MOSFET

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P-Channel Enhancement MOSFET

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丝印代码：1F**；HEXFET Power MOSFET

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P- CHANNEL MOSFET in a SOT-23 Plastic Package

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P-Channel Enhancement MOSFET

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HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

P-Channel Enhancement MOSFET

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HEXFET

Power MOSFET

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Ultra Low On-Resistance

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P-Channel 20-V (D-S) MOSFET

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Ultra Low On-Resistance

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HEXFET Power MOSFET

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Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint

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Ultra Low On-Resistance

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Compatible with Existing Surface Mount Techniques

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Compatible with Existing Surface Mount Techniques

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HEXFET

Power MOSFET

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HEXFETPower MOSFET

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P-Channel 20-V (D-S) MOSFET

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丝印代码：1F；-12V P-Channel MOSFET

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RF LINEAR POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. • S

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor

RS232C LINE DRIVER/RECEIVER

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RS232C LINE DRIVER/RECEIVER

文件：223.45 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER

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