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IRLML6401价格

参考价格:¥0.5425

型号:IRLML6401GTRPBF 品牌:International 备注:这里有IRLML6401多少钱,2026年最近7天走势,今日出价,今日竞价,IRLML6401批发/采购报价,IRLML6401行情走势销售排行榜,IRLML6401报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRLML6401

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

IRF

IRLML6401

P-Channel 15-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

TUOFENG

拓锋半导体

IRLML6401

丝印代码:1F;P-Channel Enhancement MOSFET

Features Ultra low on-resistance. P-Channel MOSFET. Fast switching.

EVVOSEMI

翊欧

IRLML6401

丝印代码:1F;P-Channel Enhancement MOSFET

■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching.

UMW

友台半导体

IRLML6401

Power MOSFET

文件:465.97 Kbytes Page:4 Pages

HOTTECH

合科泰

IRLML6401

-12V P - Channel MOSFET

PLINGSEMIC

鹏领半导体

IRLML6401

场效应管

HXYMOS

华轩阳电子

IRLML6401

P-Channel Enhancement-Mode Mosfets

TECHPUBLIC

台舟电子

IRLML6401

P-Channel Enhancement MOSFET

文件:2.35606 Mbytes Page:6 Pages

KEXIN

科信电子

IRLML6401

P-Channel Enhancement MOSFET

文件:2.56557 Mbytes Page:6 Pages

TGS

IRLML6401

P- CHANNEL MOSFET in a SOT-23 Plastic Package

文件:593.77 Kbytes Page:5 Pages

FOSHAN

蓝箭电子

IRLML6401

丝印代码:1F**;HEXFET Power MOSFET

文件:142.08 Kbytes Page:9 Pages

IRF

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

IRF

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

IRF

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

IRF

P-Channel Enhancement MOSFET

文件:2.37311 Mbytes Page:6 Pages

KEXIN

科信电子

HEXFETPower MOSFET

文件:201.41 Kbytes Page:8 Pages

IRF

Ultra Low On-Resistance

文件:201.41 Kbytes Page:8 Pages

IRF

P-Channel 20-V (D-S) MOSFET

文件:1.08266 Mbytes Page:9 Pages

VBSEMI

微碧半导体

HEXFET Power MOSFET

文件:188.06 Kbytes Page:8 Pages

IRF

Ultra Low On-Resistance

文件:203.84 Kbytes Page:9 Pages

IRF

Ultra Low On-Resistance, P-Channel MOSFET, SOT-23 Footprint

文件:196.36 Kbytes Page:8 Pages

IRF

Ultra Low On-Resistance

文件:203.84 Kbytes Page:9 Pages

IRF

Compatible with Existing Surface Mount Techniques

文件:195.38 Kbytes Page:8 Pages

IRF

Compatible with Existing Surface Mount Techniques

文件:195.38 Kbytes Page:8 Pages

IRF

HEXFETPower MOSFET

文件:147.66 Kbytes Page:9 Pages

IRF

P-Channel 20-V (D-S) MOSFET

文件:1.0826 Mbytes Page:9 Pages

VBSEMI

微碧半导体

HEXFETPower MOSFET

文件:246.26 Kbytes Page:2 Pages

ZPSEMIZP Semiconductor

至尚臻品

丝印代码:1F;-12V P-Channel MOSFET

文件:984.7 Kbytes Page:3 Pages

TECHPUBLIC

台舟电子

RF LINEAR POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. • S

MOTOROLA

摩托罗拉

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor

MOTOROLA

摩托罗拉

RS232C LINE DRIVER/RECEIVER

文件:223.45 Kbytes Page:7 Pages

NJRC

日本无线

RS232C LINE DRIVER/RECEIVER

文件:223.45 Kbytes Page:7 Pages

NJRC

日本无线

RS232C LINE DRIVER/RECEIVER

文件:223.45 Kbytes Page:7 Pages

NJRC

日本无线

IRLML6401产品属性

  • 类型

    描述

  • OPN:

    IRLML6401TRPBF

  • Qualification:

    Non-Automotive

  • Package name:

    SOT23

  • VDS max:

    -12 V

  • RDS (on) @4.5V max:

    50 mΩ

  • ID @25°C max:

    -4.3 A

  • QG typ @4.5V:

    10 nC

  • Special Features:

    Small Power

  • Polarity:

    P

  • VGS(th) min:

    -0.4 V

  • VGS(th) max:

    -0.95 V

  • VGS(th):

    -0.55 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-19 16:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
SOT23-3
25000
全新原装现货,假一赔十
UMW 友台
23+
SOT-23
24000
原装正品,实单请联系
IR
25+
SOT-23
6500
十七年专营原装现货一手货源,样品免费送
INFINEON
25+
SOT-23
12000
只做原装 有挂有货 假一赔十
IR
24+
SOT23
20000
全新原装现货!自家库存!
IR
25+
SOT-23
3000
公司原装现货常备物料!
INFINEON/英飞凌
2450+
SOT-23
9850
只做原装正品现货或订货假一赔十!
INFINEON/英飞凌
2019+
SOT23
78550
原厂渠道 可含税出货
INFINEON
24+
SOT23
97500
郑重承诺只做原装进口现货
IR
23+
SOT-23
65400

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