Description

These P-Channel MOSFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET® power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in battery and

load management.

A thermally enhanced large pad leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power MOSFET with the

industry's smallest footprint. This package, dubbed the Micro3™, is ideal for

applications where printed circuit board space is at a premium. The low profile

(<1.1mm) of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available.