丝印代码：BBPKU；Generation VTechnology UltraLowOn- Resistance

Features VDS (V) = 30V RDS(ON)

丝印代码：BBPKU；MOSFET

Features VDS (V) = 30V RDS(ON)

MOSFET N-CH 30V 1.2A SOT-23

Generation V Technology, Ultra Low On-Resistance

N-Channel 30-V (D-S) MOSFET

文件：1.07144 Mbytes Page：9 Pages

采用 Micro 3 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

OCTAL PERIPHERAL DRIVER ARRAYS

Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS) and the higher current/voltage requirements of lamps,

OCTAL PERIPHERAL DRIVER ARRAYS

Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS) and the higher current/voltage requirements of lamps,

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages