Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provid

Generation VTechnology UltraLowOn- Resistance

Features VDS (V) = 30V RDS(ON)

MOSFET

Features VDS (V) = 30V RDS(ON)

采用 Micro 3 封装的 30V 单 N 沟道功率 MOSFET

HEXFET Power MOSFET

文件：81.91 Kbytes Page：8 Pages

HEXFET Power MOSFET

Generation VTechnology UltraLowOn- Resistance

Features VDS (V) = 30V RDS(ON)

MOSFET

Features VDS (V) = 30V RDS(ON)

Generation V Technology, Ultra Low On-Resistance

HEXFET Power MOSFET

文件：247.07 Kbytes Page：8 Pages

Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET

文件：230.42 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.07155 Mbytes Page：9 Pages

ULTRA LOW ON RESISFANCE

文件：258.529 Kbytes Page：9 Pages

ULTRA LOW ON RESISFANCE

文件：258.529 Kbytes Page：9 Pages

Compatible with Existing Surface Mount Techniques

文件：247.12 Kbytes Page：8 Pages

Compatible with Existing Surface Mount Techniques

文件：247.12 Kbytes Page：8 Pages

MOSFET N-CH 30V 1.2A SOT-23

N-Channel 30-V (D-S) MOSFET

文件：1.07144 Mbytes Page：9 Pages

采用 Micro 3 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Featuring continuous load current ratings to 500 mA for each of the drivers, the Series ULN28xxA/LW and ULQ28xxA/LW high voltage, high-current Darlington arrays are ideally suited for interfacing between low-level logic circuitry and multiple periphera

Shorty Bushings

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Thin Panel Bushings

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975 MHz Center Frequency

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