Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provid

Generation VTechnology UltraLowOn- Resistance

Features VDS (V) = 30V RDS(ON)

MOSFET

Features VDS (V) = 30V RDS(ON)

采用 Micro 3 封装的 30V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

HEXFET Power MOSFET

文件：81.91 Kbytes Page：8 Pages

HEXFET Power MOSFET

丝印代码：BBPKU；Generation VTechnology UltraLowOn- Resistance

Features VDS (V) = 30V RDS(ON)

丝印代码：BBPKU；MOSFET

Features VDS (V) = 30V RDS(ON)

Generation V Technology, Ultra Low On-Resistance

HEXFET Power MOSFET

文件：247.07 Kbytes Page：8 Pages

Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET

文件：230.42 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.07155 Mbytes Page：9 Pages

ULTRA LOW ON RESISFANCE

文件：258.529 Kbytes Page：9 Pages

ULTRA LOW ON RESISFANCE

文件：258.529 Kbytes Page：9 Pages

Compatible with Existing Surface Mount Techniques

文件：247.12 Kbytes Page：8 Pages

Compatible with Existing Surface Mount Techniques

文件：247.12 Kbytes Page：8 Pages

MOSFET N-CH 30V 1.2A SOT-23

N-Channel 30-V (D-S) MOSFET

文件：1.07144 Mbytes Page：9 Pages

采用 Micro 3 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

OCTAL PERIPHERAL DRIVER ARRAYS

Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS) and the higher current/voltage requirements of lamps,

OCTAL PERIPHERAL DRIVER ARRAYS

Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS) and the higher current/voltage requirements of lamps,

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages