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IRLL110价格

参考价格:¥1.4116

型号:IRLL110PBF 品牌:INTERNATIONAL 备注:这里有IRLL110多少钱,2026年最近7天走势,今日出价,今日竞价,IRLL110批发/采购报价,IRLL110行情走势销售排行榜,IRLL110报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:IRLL110;100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

UMW

友台半导体

IRLL110

100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

UMW

友台半导体

IRLL110

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Repetitive Avalanche

IRF

IRLL110

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

VISHAYVishay Siliconix

威世威世科技公司

IRLL110

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

INFINEON

英飞凌

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalan

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 100-V (D-S) MOSFET

文件:930.08 Kbytes Page:6 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:358.68 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:358.68 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

POWER RECTIFIERS(1.0A,500-1000V)

MOSPEC

统懋

POWER RECTIFIERS(1.0A,500-1000V)

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

MOSPEC

统懋

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS

MOSPEC

统懋

IRLL110产品属性

  • 类型

    描述

  • 型号

    IRLL110

  • 功能描述

    MOSFET N-Chan 100V 1.5 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-7-23 18:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
25+
SOT223
35721
VISHAY/威世全新特价IRLL110TRPBF即刻询购立享优惠#长期有货
VISHAY
24+
SOT223
7850
只做原装正品现货或订货假一赔十!
VISHAY/威世
25+
SOT-223
9389
全新原装现货特价销售,欢迎来电查询
VISHAY/威世
25+
SOT223
15000
全新原装现货,假一赔十.
INFINE0N
21+
TO-220
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
VISHAY(威世)
24+
N/A
12980
原装正品现货支持实单
VISHAY/威世
26+
SOT-223
18000
原装正品,可配单,支持实单
ir
06+
TO-220
15000
原装
IR
24+
T0220
70
07PB
2019+
SOT223
36000
原盒原包装 可BOM配套

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