丝印代码：IRLL110；100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Repetitive Avalanche

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalan

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

N-Channel 100-V (D-S) MOSFET

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Power MOSFET

文件：358.68 Kbytes Page：9 Pages

Power MOSFET

文件：358.68 Kbytes Page：9 Pages

POWER RECTIFIERS(1.0A,500-1000V)

POWER RECTIFIERS(1.0A,500-1000V)

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS