N-Ch 60V Fast Switching MOSFETs

Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

采用 SOT-223 封装的 55V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• 逻辑电平;

HEXFET Power MOSFET

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丝印代码：LL024N；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rosin = 85m @Vos = 10V. Rosin = 100m2 @Vgs = 45V. High dense cel design for extremely low Rosin. Rugged and relabi. Lead free products acquired. SOT-223 package.

ADVANCED PROCESS TECHNOLOGY

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HEXFET Power MOSFET

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ADVANCED PROCESS TECHNOLOGY

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HEXFET짰 Power MOSFET

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HEXFET짰 Power MOSFET

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N-Channel 60-V (D-S) MOSFET

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Surface Mount

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1.4cm (0.55-inch) NTSC/PAL Color LCD Panel

Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

N-CHANNEL POWER MOSFET

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Silicon planar type

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