Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

Compact, Portable IP67 Military Fast Ethernet Switch

PRODUCT DESCRIPTION Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. When building communications where data prioritization is not a concern and the amount of traffic is low, unmanaged, Fast Ethernet switche

Pulse Encapsulated P.C. Board Mount

Features These ferrite cored transformers are fully encapsulated in a high grade black molded case with a UL94V-O rating. Units are intended for wide band and pulse applications including thyristor / triac firing circuits. Peak pulse voltage rating maximum of 250V. Insulation tested to 1,000

Innovative Pocket-Sized Measurement Technology

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횠6.35mm mounting Black anodised aluminium housing

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Low Profile

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