Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

Voltage Variable Capacitance Diode (Tuning Diode)

Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con

General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat

Phase Control SCR (125-175 Amperes Avg 100-1600 Volts)

Phase Control SCR 125-175 Amperes Avg 100-1600 Volts Applications: □ Power Supplies □ Battery Chargers □ Motor Control □ Light Dimmers □ VAR Generators

SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.