型号 功能描述 生产厂家 企业 LOGO 操作
IRL3715ZCS

High Frequency Synchronous Buck Converters for Computer Processor Power

Applications High Frequency Synchronous Buck Converters for Computer Processor Power Benefits Low RDS(on)at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current

IRF

HEXFET짰 Power MOSFET

文件:711.41 Kbytes Page:12 Pages

IRF

HEXFET® Power MOSFET

Infineon

英飞凌

HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain or Internal Pullup Output with Overcurrent Limit  Cho

DIODES

美台半导体

HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain or Internal Pullup Output with Overcurrent Limit  Cho

DIODES

美台半导体

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain Output with Overcurrent Limit  Chopper-Stabilized Desi

DIODES

美台半导体

AUTOMOTIVE HIGH-VOLTAGE HALL-EFFECT LATCH

Features  Bipolar Latch (South Pole: On, North Pole: Off)  3.0V to 27V Operating Voltage Range  40V Load Dump Protection  Sensitivity Options: BOP and BRP of ±30G to ±140G Typical  Resistant to Physical Stress  Single, Open-Drain Output with Overcurrent Limit  Chopper-Stabilized Desi

DIODES

美台半导体

AM3715/03 Applications Processor

文件:2.14804 Mbytes Page:280 Pages

TI

德州仪器

IRL3715ZCS产品属性

  • 类型

    描述

  • 型号

    IRL3715ZCS

  • 功能描述

    MOSFET N-CH 20V 50A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-1-3 11:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
INFINEON
23+
D2PAK
8000
只做原装现货
IR
23+
TO-263
50000
全新原装正品现货,支持订货
IOR
24+
TO263
800
IR
2023+
TO-263
50000
原装现货
IR
05+
原厂原装
12751
只做全新原装真实现货供应
IR
23+24
SOT263
16853
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
IR
22+
SOT263
8000
原装正品支持实单
VB
21+
D2PAK
10000
原装现货假一罚十
IR
17+
D2-PAK
31518
原装正品 可含税交易

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