HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026廓 , ID = 55A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ADVANCED PROCESS TECHNOLOGY

文件：1.54679 Mbytes Page：9 Pages

N-Channel 100-V (D-S) MOSFET

文件：981.62 Kbytes Page：7 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.54679 Mbytes Page：9 Pages

1A LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2910 series of adjustable and fixed voltage regulators are designed to provide 1A output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.5V at maximum output current, decreasing at lower load

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

4-Bit DAC and Voltage Monitor

文件：222.85 Kbytes Page：6 Pages