IRKT71价格

参考价格:¥716.1178

型号:IRKT71-4 品牌:Int'L Rectifier 备注:这里有IRKT71多少钱,2025年最近7天走势,今日出价,今日竞价,IRKT71批发/采购报价,IRKT71行情走势销售排行榜,IRKT71报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRKT71

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

封装/外壳:ADD-A-PAK(3 + 4) 包装:散装 描述:SCR DBL 2SCR 600V 75A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

SCR DBL 2SCR 600V 75A ADD-A-PAK

VishayVishay Siliconix

威世威世科技公司

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

封装/外壳:ADD-A-PAK(3 + 4) 包装:散装 描述:SCR DBL 2SCR 800V 75A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

SCR DBL 2SCR 800V 75A ADD-A-PAK

VishayVishay Siliconix

威世威世科技公司

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

SCR DBL 2SCR 1000V 75A ADD-A-PAK

VishayVishay Siliconix

威世威世科技公司

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

IRKT71产品属性

  • 类型

    描述

  • 型号

    IRKT71

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

更新时间:2025-11-2 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
module
6000
全新原装正品现货 假一赔佰
IR
NEW
模块
3562
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
2023+
MODULE
152
主打螺丝模块系列
IR
23+
MODULE
7000
IR
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
可控硅
23+
650
FUJI
23+
模块
20763
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
22+
6000
终端可免费供样,支持BOM配单
IR
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
IR
23+
MODULE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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