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IRKT71价格

参考价格:¥716.1178

型号:IRKT71-4 品牌:Int'L Rectifier 备注:这里有IRKT71多少钱,2026年最近7天走势,今日出价,今日竞价,IRKT71批发/采购报价,IRKT71行情走势销售排行榜,IRKT71报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRKT71

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu basepla

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

封装/外壳:ADD-A-PAK(3 + 4) 包装:散装 描述:SCR DBL 2SCR 600V 75A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

SCR DBL 2SCR 600V 75A ADD-A-PAK

VISHAYVishay Siliconix

威世威世科技公司

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

封装/外壳:ADD-A-PAK(3 + 4) 包装:散装 描述:SCR DBL 2SCR 800V 75A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块

ETC

知名厂家

SCR DBL 2SCR 800V 75A ADD-A-PAK

VISHAYVishay Siliconix

威世威世科技公司

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

SCR DBL 2SCR 1000V 75A ADD-A-PAK

VISHAYVishay Siliconix

威世威世科技公司

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

文件:237.43 Kbytes Page:10 Pages

IRF

IRKT71产品属性

  • 类型

    描述

  • SCR 数,二极管:

    2 SCRs

  • 电压 - 断态:

    600V

  • 电流 - 通态(It(AV))(最大值):

    75A

  • 电流 - 通态(It(RMS))(最大值):

    165A

  • 电压 - 栅极触发(Vgt)(最大值):

    2.5V

  • 电流 - 栅极触发(Igt)(最大值):

    150mA

  • 电流 - 不重复浪涌 50,60Hz(Itsm):

    1665A,1740A

  • 电流 - 保持(Ih)(最大值):

    250mA

  • 工作温度:

    -40°C ~ 125°C (TJ)

  • 安装类型:

    底座安装

  • 封装/外壳:

    ADD-A-PAK(3 + 4)

更新时间:2026-5-13 22:30:00
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