THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

PNP SILICON TRANSISTORS

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Complementary low voltage transistor

文件：157.51 Kbytes Page：9 Pages