RADIATION HARDENED POWER MOSFET THRU-HORE (TO-204AA/AE)

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE) International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been c

Dual, High Speed, 2.5V to 12V, Rail-to-Rail Amplifier

Description The FAN4230 is a dual, low cost, high performance, voltage feedback amplifier that consumes only 2.5mA of supply current while providing ±130mA of output short circuit current. The FAN4230 is designed to operate from 2.5V to 12V (±6V) supplies. The common mode voltage range extends

High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp

Description The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED technology. These devices are

1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

Silicon Power Rectifier

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Silicon Power Rectifier

文件：120.31 Kbytes Page：3 Pages