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位置：首页 > IC中文资料第1275页 > IRFZ34S

型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ34S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34S

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ34S

Power MOSFET

FEATURES • Advanced process technology • Surface mount • Low-profile through-hole (IRFZ34L, SiHFZ34L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34S

Power MOSFET

文件：355.44 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34S_V01

Power MOSFET

FEATURES • Advanced process technology • Surface mount • Low-profile through-hole (IRFZ34L, SiHFZ34L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34STRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34STRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34STRR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34STRRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34S/IRFZ34L/SiHFZ34S/SiHFZ34L

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34S_11

Power MOSFET

文件：355.44 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34SPBF

Power MOSFET

文件：355.44 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34STRLPBF

Power MOSFET

文件：355.44 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34STRRPBF

Power MOSFET

文件：355.44 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFZ34S产品属性

  • 类型

    描述

  • 型号

    IRFZ34S

  • 功能描述

    MOSFET N-Chan 60V 30 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFZ34S供应商更多...

更新时间：2026-3-10 21:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
IRFZ34STRRPBF
IR
20+
SOT263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市金芯世纪电子有限公司
IRFZ34STRPBF
IR/VISHAY
22+
SOT263
100000
代理渠道/只做原装/可含税
询价
深圳市宏捷佳电子科技有限公司
IRFZ34STRRPBF
IR
2023+
TO-263
50000
原装现货
询价
深圳市一线半导体有限公司
IRFZ34STRR
IR
24+
TO-263
36800
询价
深圳市中联芯电子有限公司
IRFZ34STRRPBF
IR
24+
SOT263
9000
只做原装正品 有挂有货 假一赔十
询价
深圳市昌和盛利电子有限公司
IRFZ34S
IR
26+
TO-263
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
上海金庆电子技术有限公司
IRFZ34STRR
IR
06+
TO-263
61
全新 发货1-2天
询价
深圳市宏世佳电子科技有限公司
IRFZ34S
IR
2025+
TO-263
4675
全新原厂原装产品、公司现货销售
询价
芯有半导体（深圳）有限公司
IRFZ34S
INTERNATIONA
05+
原厂原装
4254
只做全新原装真实现货供应
询价
深圳市华来深电子有限公司
IRFZ34STRPBF
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价

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