型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ34L

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFZ34L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRFZ34L

Power MOSFET

FEATURES • Advanced process technology • Surface mount • Low-profile through-hole (IRFZ34L, SiHFZ34L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a

VishayVishay Siliconix

威世威世科技公司

IRFZ34L

Power MOSFET

文件:355.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ34L

HEXFET Power MOSFET

Infineon

英飞凌

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:355.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFZ34L产品属性

  • 类型

    描述

  • 型号

    IRFZ34L

  • 功能描述

    MOSFET N-CH 60V 30A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-21 20:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
IR
24+/25+
500
原装正品现货库存价优
IR
23+
NA
1813
专做原装正品,假一罚百!
IR
25+
262
860000
明嘉莱只做原装正品现货
IR
23+
TO-220
65480
IR
NEW
TO-262
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ir
24+
N/A
6980
原装现货,可开13%税票
IR
25+
PLCC-44
18000
原厂直接发货进口原装
IOR
25+
TO-220
2987
绝对全新原装现货供应!
IR
22+
TO-220
5000
全新原装现货!自家库存!

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