位置：首页 > IC中文资料第6306页 > IRFZ24VL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ24VL | HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF |   | |
IRFZ24VL | HEXFET Power MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |
IRFZ24VL产品属性
- 类型
描述
- 型号
IRFZ24VL
- 功能描述
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-262 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
08+ |
TO-220 |
2132 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR/VISHAY |
20+ |
D2-Pak |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+/25+ |
850 |
原装正品现货库存价优 |
||||
I |
25+ |
TO-TO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
21+ |
TO-220 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
25+23+ |
TO-220 |
28864 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
IRFZ24VL规格书下载地址
IRFZ24VL参数引脚图相关
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DdatasheetPDF页码索引
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