型号 功能描述 生产厂家 企业 LOGO 操作
IRFY130

Simple Drive Requirements Ease of Paralleling Hermetically Sealed

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

IRF

IRFY130

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件:18.73 Kbytes Page:2 Pages

SEME-LAB

IRFY130

Simple Drive Requirements

文件:167.51 Kbytes Page:7 Pages

IRF

IRFY130

Simple Drive Requirements Ease of Paralleling Hermetically Sealed

Infineon

英飞凌

POWER MOSFET THRU-HOLE (TO-257AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

IRF

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

IRF

POWER MOSFET THRU-HOLE (TO-257AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

IRF

Simple Drive Requirements Ease of Paralleling Hermetically Sealed

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

IRF

Simple Drive Requirements

文件:167.51 Kbytes Page:7 Pages

IRF

Simple Drive Requirements

文件:167.81 Kbytes Page:7 Pages

IRF

N-Channel MOSFET in a Hermetically sealed

文件:15.61 Kbytes Page:1 Pages

SEME-LAB

HiRel MOSFETs

Infineon

英飞凌

Simple Drive Requirements

文件:167.81 Kbytes Page:7 Pages

IRF

HiRel MOSFETs

Infineon

英飞凌

N-Channel MOSFET in a Hermetically sealed

文件:15.61 Kbytes Page:1 Pages

SEME-LAB

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

SUNMATE

森美特

GAMMA SEALS

DESCRIPTION The BECA 130 profile is a gamma seal. Sealing happens when the axial force of the lip comes into contact with the housing. The metal part protects the rubber axial lip from external pollution. APPLICATIONS Axles Machine tools Electric motors Pumps Transmissions

FRANCEJOINT

Screw connection

The plug connector 130-A series was developed according to “White Goods Standard RAST 5 (Plug-Connection-Technology with a pitch of 5 mm). Due to its diverse coding possibilities, it offers maximum safety against incorrect plugging. For the coded version, a corresponding drawing or description

WECO

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY

文件:120.98 Kbytes Page:1 Pages

WITTEN

THREE PHASE BRIDGE

文件:94.82 Kbytes Page:7 Pages

IRF

IRFY130产品属性

  • 类型

    描述

  • 型号

    IRFY130

  • 制造商

    International Rectifier

  • 功能描述

    HEXFET, HI-REL - Bulk

更新时间:2025-11-23 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR/INFINEON
24+
SMD
600
“芯达集团”专营军工百分之百原装进口
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
三年内
1983
只做原装正品
IR
专业铁帽
TO-257
67500
铁帽原装主营-可开原型号增税票
IR
2318+
TO-220
4862
只做进口原装!假一赔百!自己库存价优!
IR
23+
DPAK(TO-
7000
IR
24+
原厂封装
65250
支持样品,原装现货,提供技术支持!
25+
长期备有现货
500000
行业低价,代理渠道
IR
QQ咨询
189-8877-7135
148
全新原装 研究所指定供货商

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