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IRFU9014价格
参考价格:¥1.9260
型号:IRFU9014PBF 品牌:Vishay 备注:这里有IRFU9014多少钱,2024年最近7天走势,今日出价,今日竞价,IRFU9014批发/采购报价,IRFU9014行情走势销售排行榜,IRFU9014报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFU9014 | HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFU9014 | PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A) Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFU9014 | P-CHANNELPOWERMOSFETS FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | ||
IRFU9014 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | ||
IRFU9014 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9014 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surfacemount(IRFR9014,SiHFR9014) •Straightlead(IRFU9014,SiHFU9014) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | ||
IRFU9014 | iscP-ChannelMOSFETTransistor 文件:345.48 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFET짰PowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | |||
P-Channel60-V(D-S)MOSFET 文件:972.98 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET 文件:1.16375 Mbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
NPNSILICONTRANSISTOR FEATURES Powerdissipation PCM:0.4W(Tamb=25°C) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
TO-92Plastic-EncapsulateTransistors TO-92Plastic-EncapsulateTransistors NPNsilicon | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. | |||
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,C andD,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistorST9015is recommended. Onspecialrequest,thesetransistorscanbe | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
FairchildQFETforSynchronousRectification Introduction FairchildiscurrentlydevelopingandmarketinganewQFETseriesthathasimprovedRDS(on),gatecharge,andswitchingspeedcharacteristics.ThesuperiorfeaturesoftheseQFETsareveryusefulforincreasingtheefficiencyoflowoutputvoltagepowersupplies,makingitspecially | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNEPITAXIALSILICONTRANSISTOR PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |
IRFU9014产品属性
- 类型
描述
- 型号
IRFU9014
- 功能描述
MOSFET P-Chan 60V 5.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
1305+ |
TO-251 |
12000 |
公司特价原装现货 |
|||
IR |
20+ |
TO-251 |
90000 |
全新原装正品/库存充足 |
|||
IR |
06+ |
TO-251 |
12000 |
原装库存 |
|||
IR |
23+ |
原厂原装 |
5000 |
全新原装 |
|||
IR |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
23+ |
TO-251 |
35890 |
||||
IR |
22+ |
TO-251 |
4500 |
全新原装品牌专营 |
|||
VISHAY/威世 |
23+ |
NA/ |
5750 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY(威世) |
23+ |
TO-251 |
7845 |
支持大陆交货,美金交易。原装现货库存。 |
|||
cet |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
IRFU9014规格书下载地址
IRFU9014参数引脚图相关
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- IRFU020
- IRFU014
- IRFU012
- IRFU010
- IRFS840
- IRFS830
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2019-11-1
DdatasheetPDF页码索引
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