Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

文件：141.22 Kbytes Page：10 Pages

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET® Power MOSFET

P-Channel 175°C Operating Temperature Surface Mount (IRFR6215) Straight Lead (IRFU6215) Advanced Process Technology Fast Switching Fully Avalanche Rated

175째C Operating Temperature

文件：247.33 Kbytes Page：11 Pages

175째C Operating Temperature

文件：247.33 Kbytes Page：11 Pages

AGC IC for telephone speech network

■ Overview The AN6215S is an AGC IC for telephone speech network, and it incorporates an microphone input detection circuit and a receiver gain control circuit. It is especially best suited for cordless telephone thanks to a good speech tone quality obtained by reducing howling and echo sound. ■

5.0V HCMOS Surface Mount Crystal Clock Oscillator

文件：84.64 Kbytes Page：2 Pages

Advanced Planar Technology Low On-Resistance

文件：275.78 Kbytes Page：11 Pages

Advanced Planar Technology Low On-Resistance

文件：825.78 Kbytes Page：12 Pages

AUTOMOTIVE GRADE

文件：1.43428 Mbytes Page：10 Pages