Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

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-150V 单 N 通道 HEXFET 功率 MOSFET，采用 I-Pak 封装

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET® Power MOSFET

P-Channel 175°C Operating Temperature Surface Mount (IRFR6215) Straight Lead (IRFU6215) Advanced Process Technology Fast Switching Fully Avalanche Rated

175째C Operating Temperature

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175째C Operating Temperature

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AGC IC for telephone speech network

■ Overview The AN6215S is an AGC IC for telephone speech network, and it incorporates an microphone input detection circuit and a receiver gain control circuit. It is especially best suited for cordless telephone thanks to a good speech tone quality obtained by reducing howling and echo sound. ■

5.0V HCMOS Surface Mount Crystal Clock Oscillator

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Advanced Planar Technology Low On-Resistance

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Advanced Planar Technology Low On-Resistance

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AUTOMOTIVE GRADE

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