Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

VDSS = 55V RDS(on) = 0.075Ω ID = 19A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These be

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

Lowpass Filter

General Description KR 2605 is a 6 MHz lowpass filter suitable for video applications. Other bandwidths available. Please consult the factory. Features • Elliptic Lowpass • Sharp Transition to Stopband • Group Delay Equalization • >50 dB Stopband • 75 Ω Source and Load

Five-Channel 300mA LDO Regulator

Features • 2.7V to 5.5V Operating Input Voltage Range • 5 Outputs with Factory Programmable Voltages from 0.6V to 3.7V • 300mA Output Current Per Channel • 3mmx3mm, 14-Pin TDFN Package • ±1 Typical Accuracy • Low 30μA Quiescent Current • High PSRR (68dB @10KHZ) • 250mV Dropout Voltage at

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.08 Kbytes Page：4 Pages

P CHANNEL ENHANCEMENT MODE

文件：74.96 Kbytes Page：4 Pages

2.8W Stereo Class-D Audio Power Amplifier

文件：614.21 Kbytes Page：30 Pages