位置：首页 > IC中文资料第4130页 > IRFU2407
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU2407 | Power MOSFET Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Surfa | KERSEMI |   | |
IRFU2407 | Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?? Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | |
IRFU2407 | isc N-Channel MOSFET Transistor 文件：247.18 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFU2407 | Surface Mount (IRFR2407) 文件：3.72412 Mbytes Page：10 Pages | KERSEMI | | |
IRFU2407 | Advanced Process Technology 文件：140.18 Kbytes Page：11 Pages | IRF | | |
IRFU2407 | Power MOSFET 文件：3.72412 Mbytes Page：10 Pages | LUCKY-LIGHT | | |
Surface Mount Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
ADVANCED PROCESS TECHNOLOGY Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
HEXFET짰Power MOSFET Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | ||
Bandpass Filter 文件：24.57 Kbytes Page：2 Pages | KR | | ||
CAPTIVE PANEL SCREWS 文件：395.93 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
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SPEED DRIVER INTEGRATED SERIES 文件：258.68 Kbytes Page：1 Pages | ASSUN | | ||
SPEED DRIVER INTEGRATED SERIES 文件：587.49 Kbytes Page：1 Pages | ASSUN | |
IRFU2407产品属性
- 类型
描述
- 型号
IRFU2407
- 功能描述
MOSFET N-CH 75V 42A I-PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR原装 |
25+23+ |
TO-251 |
23799 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-251 |
1500 |
||||
IR |
23+ |
TO-251 |
8000 |
原装正品,假一罚十 |
|||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-251 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
1132+ |
TO-251 |
6325 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
NEW |
TO-251 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
24+ |
TO-251 |
9200 |
绝对原装现货,价格低,欢迎询购! |
IRFU2407规格书下载地址
IRFU2407参数引脚图相关
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- IRFS840
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- IRFS750
- IRFS740
- IRFS730
- IRFS720
- IRFS654
- IRFS641
- IRFS640
IRFU2407数据表相关新闻
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二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感 器、逻辑芯片、电源芯片、放大器、
2019-11-1
DdatasheetPDF页码索引
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