Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Ultr

isc N-Channel MOSFET Transistor

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采用 I-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

N-Channel 60 V (D-S) MOSFET

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RF Coated Chokes (Axial Leads)

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3M??Polyimide Film Electrical Tape 1205

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BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushed

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BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushed

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METAL BRUSH

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