isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4.0A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR