Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 250V ■ Lower RDS(ON) : 0.214 Ω (Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current : 10 A (Max.) @ VDS =

Advanced Power MOSFET

Dual High Speed, Implanted BiFET Op Amp

PRODUCT DESCRIPTION The AD644 is a pair of matched high speed monolithic FET input operational amplifiers fabricated with the most advanced bipolar, JFET and laser-trimming technologies. The AD644 offers matched bias currents that are significantly lower than currently available monolithic dual B

Dual High Speed, Implanted BiFET Op Amp

PRODUCT DESCRIPTION The AD644 is a pair of matched high speed monolithic FET input operational amplifiers fabricated with the most advanced bipolar, JFET and laser-trimming technologies. The AD644 offers matched bias currents that are significantly lower than currently available monolithic dual B

600H and 600NH series

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Mounting brackets required to meet UL/CSA external mounting requirements.

文件：1.06838 Mbytes Page：4 Pages

Mounting brackets required to meet UL/CSA external mounting requirements.

文件：1.06838 Mbytes Page：4 Pages