200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10.2A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

SEMICONDUCTORS

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isc N-Channel MOSFET Transistor

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N-Channel MOSFET uses advanced trench technology

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Improved inductive ruggedness

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N-CHANNEL MOSFET in a TO-220F Plastic Package

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Improved inductive ruggedness

中低压MOS≤200V

Rugged Gate Oxide Technology

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS= 200V Lower RDS(ON) : 0.144 (Typ. )

200V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild sproprietary,planar, DMOS technology. This advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored to minimize on-state resistance, provid

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

isc N-Channel MOSFET Transistor

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Improved gate charge

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Improved gate charge

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

Quartz Stability

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3M??Scotch짰 Transparent Film Tape 640

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MINIATURE FUSEHOLDERS

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PULSE TRANSFORMERS

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